ABSTRACT
A simple model based on the simulation of
distributed series resistance effects in solar cells is
presented. This model overcomes limitations of the
standard two-diode model representation of solar cells in
respect to fitting Suns-Voc (m-Voc) and Jsc-Suns curves.
The model results include (i) an improved understanding
of two-dimensional current flows in shunted solar cells, (ii)
the prediction of shunt types from m-Voc curves and
corresponding distributed resistance model fits, (iii) the
insight that lateral current flows in solar cells are
responsible for deviations between Jsc-Suns data and twodiode
model fits in the high illumination range. The
presented approach extends the application range of
Suns-Voc measurements to solar cells which cannot
adequately be described with the two-diode model.